Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
595 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Length
15.8mm
Typical Gate Charge @ Vgs
222 nC @ 10 V
Width
5.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
22.74mm
Forward Diode Voltage
1.2V
Country of Origin
China
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₪ 128.471
Each (In a Tube of 450) (ex VAT)
₪ 150.311
Each (In a Tube of 450) (inc VAT)
450
₪ 128.471
Each (In a Tube of 450) (ex VAT)
₪ 150.311
Each (In a Tube of 450) (inc VAT)
450
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
450 - 450 | ₪ 128.471 | ₪ 57,811.95 |
900+ | ₪ 122.304 | ₪ 55,036.83 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
595 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Length
15.8mm
Typical Gate Charge @ Vgs
222 nC @ 10 V
Width
5.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
22.74mm
Forward Diode Voltage
1.2V
Country of Origin
China