Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
0.81 nC @ 5 V
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
₪ 431.25
₪ 0.345 Each (Supplied on a Reel) (ex VAT)
₪ 504.56
₪ 0.404 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
1250
₪ 431.25
₪ 0.345 Each (Supplied on a Reel) (ex VAT)
₪ 504.56
₪ 0.404 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
1250
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 1250 - 2475 | ₪ 0.345 | ₪ 8.62 |
| 2500 - 12475 | ₪ 0.315 | ₪ 7.88 |
| 12500 - 24975 | ₪ 0.225 | ₪ 5.62 |
| 25000+ | ₪ 0.225 | ₪ 5.62 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
0.81 nC @ 5 V
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details


