Technical documents
Specifications
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Width
9.2mm
Transistor Material
Si
Height
4.5mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
₪ 54.33
₪ 27.165 Each (In a Pack of 2) (ex VAT)
₪ 63.57
₪ 31.783 Each (In a Pack of 2) (inc. VAT)
Standard
2
₪ 54.33
₪ 27.165 Each (In a Pack of 2) (ex VAT)
₪ 63.57
₪ 31.783 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
2 - 6 | ₪ 27.165 | ₪ 54.33 |
8 - 38 | ₪ 25.59 | ₪ 51.18 |
40 - 198 | ₪ 23.895 | ₪ 47.79 |
200 - 398 | ₪ 21.09 | ₪ 42.18 |
400+ | ₪ 20.235 | ₪ 40.47 |
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Width
9.2mm
Transistor Material
Si
Height
4.5mm
Product details