Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
287 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Height
1.05mm
Series
NVMFS5C604NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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₪ 26.12
Each (ex VAT)
₪ 30.56
Each (inc VAT)
1
₪ 26.12
Each (ex VAT)
₪ 30.56
Each (inc VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 9 | ₪ 26.12 |
10 - 99 | ₪ 22.98 |
100 - 249 | ₪ 20.50 |
250 - 499 | ₪ 19.86 |
500+ | ₪ 18.28 |
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
287 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Height
1.05mm
Series
NVMFS5C604NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Product details