GaN N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 onsemi NTP8G202NG

RS Stock No.: 882-9834Brand: ON SemiconductorManufacturers Part No.: NTP8G202NG
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

65 W

Transistor Configuration

Cascode

Maximum Gate Source Voltage

-18 V, +18 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.53mm

Typical Gate Charge @ Vgs

6.2 nC @ 4.5 V

Width

4.83mm

Transistor Material

GaN

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

2.1V

Height

15.75mm

Country of Origin

Philippines

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P.O.A.

GaN N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 onsemi NTP8G202NG

P.O.A.

GaN N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 onsemi NTP8G202NG
Stock information temporarily unavailable.

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

65 W

Transistor Configuration

Cascode

Maximum Gate Source Voltage

-18 V, +18 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.53mm

Typical Gate Charge @ Vgs

6.2 nC @ 4.5 V

Width

4.83mm

Transistor Material

GaN

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

2.1V

Height

15.75mm

Country of Origin

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more