Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3 + Tab
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
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₪ 37.855
Each (In a Pack of 2) (ex VAT)
₪ 44.29
Each (In a Pack of 2) (inc VAT)
2
₪ 37.855
Each (In a Pack of 2) (ex VAT)
₪ 44.29
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 48 | ₪ 37.855 | ₪ 75.71 |
50 - 98 | ₪ 32.792 | ₪ 65.58 |
100 - 198 | ₪ 28.821 | ₪ 57.64 |
200 - 398 | ₪ 27.814 | ₪ 55.63 |
400+ | ₪ 26.793 | ₪ 53.59 |
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3 + Tab
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V