Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.85mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
26 @ 10 V nC
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
₪ 8.978
Each (On a Reel of 3000) (ex VAT)
₪ 10.504
Each (On a Reel of 3000) (inc VAT)
3000
₪ 8.978
Each (On a Reel of 3000) (ex VAT)
₪ 10.504
Each (On a Reel of 3000) (inc VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 12000 | ₪ 8.978 | ₪ 26,933.18 |
15000+ | ₪ 8.95 | ₪ 26,849.28 |
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.85mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
26 @ 10 V nC
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details