Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
218 A
Maximum Drain Source Voltage
30 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Length
5mm
Typical Gate Charge @ Vgs
99 @ 10 V nC
Width
5.85mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
₪ 14.138
Each (In a Pack of 10) (ex VAT)
₪ 16.541
Each (In a Pack of 10) (inc VAT)
10
₪ 14.138
Each (In a Pack of 10) (ex VAT)
₪ 16.541
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₪ 14.138 | ₪ 141.38 |
100 - 490 | ₪ 11.607 | ₪ 116.07 |
500 - 990 | ₪ 9.174 | ₪ 91.74 |
1000 - 1490 | ₪ 7.761 | ₪ 77.61 |
1500+ | ₪ 7.495 | ₪ 74.95 |
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
218 A
Maximum Drain Source Voltage
30 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Length
5mm
Typical Gate Charge @ Vgs
99 @ 10 V nC
Width
5.85mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details