Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Package Type
TO220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Width
4.6mm
Height
15.7mm
Series
SuperFET III
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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₪ 21.228
Each (In a Pack of 5) (ex VAT)
₪ 24.837
Each (In a Pack of 5) (inc VAT)
5
₪ 21.228
Each (In a Pack of 5) (ex VAT)
₪ 24.837
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | ₪ 21.228 | ₪ 106.14 |
50 - 95 | ₪ 19.759 | ₪ 98.80 |
100 - 245 | ₪ 18.515 | ₪ 92.57 |
250 - 495 | ₪ 17.452 | ₪ 87.26 |
500+ | ₪ 16.543 | ₪ 82.72 |
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Package Type
TO220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Width
4.6mm
Height
15.7mm
Series
SuperFET III
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details