Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
37.5 nC @ 10 V
Height
15.87mm
Country of Origin
Korea, Republic Of
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
₪ 22.71
Each (In a Tube of 50) (ex VAT)
₪ 26.571
Each (In a Tube of 50) (inc VAT)
50
₪ 22.71
Each (In a Tube of 50) (ex VAT)
₪ 26.571
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 200 | ₪ 22.71 | ₪ 1,135.50 |
250 - 450 | ₪ 22.598 | ₪ 1,129.91 |
500+ | ₪ 22.472 | ₪ 1,123.61 |
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
37.5 nC @ 10 V
Height
15.87mm
Country of Origin
Korea, Republic Of
Product details