Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
272 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
₪ 15.39
₪ 5.13 Each (In a Pack of 3) (ex VAT)
₪ 18.01
₪ 6.002 Each (In a Pack of 3) (inc. VAT)
Standard
3
₪ 15.39
₪ 5.13 Each (In a Pack of 3) (ex VAT)
₪ 18.01
₪ 6.002 Each (In a Pack of 3) (inc. VAT)
Standard
3
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Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
272 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details