Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1.33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
0.33 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
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₪ 0.224
Each (On a Reel of 3000) (ex VAT)
₪ 0.262
Each (On a Reel of 3000) (inc VAT)
3000
₪ 0.224
Each (On a Reel of 3000) (ex VAT)
₪ 0.262
Each (On a Reel of 3000) (inc VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 3000 | ₪ 0.224 | ₪ 671.23 |
6000 - 6000 | ₪ 0.196 | ₪ 587.33 |
9000+ | ₪ 0.182 | ₪ 545.38 |
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1.33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
0.33 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China