Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
₪ 1,350.00
₪ 0.45 Each (On a Reel of 3000) (ex VAT)
₪ 1,579.50
₪ 0.526 Each (On a Reel of 3000) (inc. VAT)
3000
₪ 1,350.00
₪ 0.45 Each (On a Reel of 3000) (ex VAT)
₪ 1,579.50
₪ 0.526 Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details


