Dual N/P-Channel-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 Nexperia NX3008CBKV,115

RS Stock No.: 816-0567Brand: NexperiaManufacturers Part No.: NX3008CBKV,115
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Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

220 mA, 400 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-666

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.8 Ω, 7.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Country of Origin

Hong Kong

Product details

Dual N/P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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₪ 0.587

Each (In a Pack of 50) (ex VAT)

₪ 0.687

Each (In a Pack of 50) (inc VAT)

Dual N/P-Channel-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 Nexperia NX3008CBKV,115
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₪ 0.587

Each (In a Pack of 50) (ex VAT)

₪ 0.687

Each (In a Pack of 50) (inc VAT)

Dual N/P-Channel-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 Nexperia NX3008CBKV,115
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

220 mA, 400 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-666

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.8 Ω, 7.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Country of Origin

Hong Kong

Product details

Dual N/P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more