Nexperia NX3008CBKS Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

RS Stock No.: 136-4807Brand: NexperiaManufacturers Part No.: NX3008CBKS,115
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Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

200 mA, 350 mA

Maximum Drain Source Voltage

30 V

Series

NX3008CBKS

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.4 Ω, 4.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

990 mW

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ -4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Automotive Standard

AEC-Q101

Product details

Dual N/P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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₪ 2,430.00

₪ 0.81 Each (On a Reel of 3000) (ex VAT)

₪ 2,843.10

₪ 0.948 Each (On a Reel of 3000) (inc. VAT)

Nexperia NX3008CBKS Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

₪ 2,430.00

₪ 0.81 Each (On a Reel of 3000) (ex VAT)

₪ 2,843.10

₪ 0.948 Each (On a Reel of 3000) (inc. VAT)

Nexperia NX3008CBKS Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

Stock information temporarily unavailable.

Stock information temporarily unavailable.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

200 mA, 350 mA

Maximum Drain Source Voltage

30 V

Series

NX3008CBKS

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.4 Ω, 4.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

990 mW

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ -4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Automotive Standard

AEC-Q101

Product details

Dual N/P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more