Technical documents
Specifications
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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Please check again later.
₪ 3.076
Each (Supplied on a Reel) (ex VAT)
₪ 3.599
Each (Supplied on a Reel) (inc VAT)
50
₪ 3.076
Each (Supplied on a Reel) (ex VAT)
₪ 3.599
Each (Supplied on a Reel) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
50 - 100 | ₪ 3.076 | ₪ 153.82 |
150 - 250 | ₪ 1.832 | ₪ 91.60 |
300 - 550 | ₪ 1.748 | ₪ 87.40 |
600 - 1150 | ₪ 1.664 | ₪ 83.20 |
1200+ | ₪ 1.231 | ₪ 61.53 |
Technical documents
Specifications
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details