Technical documents
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
₪ 147.00
₪ 0.735 Each (Supplied on a Reel) (ex VAT)
₪ 171.99
₪ 0.86 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
200
₪ 147.00
₪ 0.735 Each (Supplied on a Reel) (ex VAT)
₪ 171.99
₪ 0.86 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
200
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 200 - 400 | ₪ 0.735 | ₪ 73.50 |
| 500 - 900 | ₪ 0.60 | ₪ 60.00 |
| 1000 - 1900 | ₪ 0.405 | ₪ 40.50 |
| 2000+ | ₪ 0.39 | ₪ 39.00 |
Technical documents
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Product details


