Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
₪ 126.00
₪ 0.63 Each (Supplied on a Reel) (ex VAT)
₪ 147.42
₪ 0.737 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
200
₪ 126.00
₪ 0.63 Each (Supplied on a Reel) (ex VAT)
₪ 147.42
₪ 0.737 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
200
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 200 - 400 | ₪ 0.63 | ₪ 63.00 |
| 500 - 900 | ₪ 0.405 | ₪ 40.50 |
| 1000 - 1900 | ₪ 0.405 | ₪ 40.50 |
| 2000+ | ₪ 0.315 | ₪ 31.50 |
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


