Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
₪ 96.75
₪ 1.935 Each (On a Reel of 50) (ex VAT)
₪ 113.20
₪ 2.264 Each (On a Reel of 50) (inc. VAT)
Standard
50
₪ 96.75
₪ 1.935 Each (On a Reel of 50) (ex VAT)
₪ 113.20
₪ 2.264 Each (On a Reel of 50) (inc. VAT)
Stock information temporarily unavailable.
Standard
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 50 | ₪ 1.935 | ₪ 96.75 |
| 100 - 200 | ₪ 0.81 | ₪ 40.50 |
| 250 - 450 | ₪ 0.795 | ₪ 39.75 |
| 500 - 950 | ₪ 0.75 | ₪ 37.50 |
| 1000+ | ₪ 0.615 | ₪ 30.75 |
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


