Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
60 V
Series
BSN20BK
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
0.49 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
₪ 513.00
₪ 0.855 Each (Supplied on a Reel) (ex VAT)
₪ 600.21
₪ 1.00 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
600
₪ 513.00
₪ 0.855 Each (Supplied on a Reel) (ex VAT)
₪ 600.21
₪ 1.00 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
600
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
600 - 1400 | ₪ 0.855 | ₪ 85.50 |
1500+ | ₪ 0.75 | ₪ 75.00 |
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
60 V
Series
BSN20BK
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
0.49 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Product details