Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
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Please check again later.
₪ 2.223
Each (Supplied on a Reel) (ex VAT)
₪ 2.601
Each (Supplied on a Reel) (inc VAT)
50
₪ 2.223
Each (Supplied on a Reel) (ex VAT)
₪ 2.601
Each (Supplied on a Reel) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
50 - 50 | ₪ 2.223 | ₪ 111.17 |
100 - 200 | ₪ 0.965 | ₪ 48.24 |
250 - 450 | ₪ 0.937 | ₪ 46.85 |
500 - 950 | ₪ 0.895 | ₪ 44.75 |
1000+ | ₪ 0.783 | ₪ 39.16 |
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details