Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
₪ 183.00
₪ 0.915 Each (In a Pack of 200) (ex VAT)
₪ 214.11
₪ 1.071 Each (In a Pack of 200) (inc. VAT)
Standard
200
₪ 183.00
₪ 0.915 Each (In a Pack of 200) (ex VAT)
₪ 214.11
₪ 1.071 Each (In a Pack of 200) (inc. VAT)
Stock information temporarily unavailable.
Standard
200
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 200 - 200 | ₪ 0.915 | ₪ 183.00 |
| 400 - 800 | ₪ 0.885 | ₪ 177.00 |
| 1000 - 1800 | ₪ 0.60 | ₪ 120.00 |
| 2000 - 3800 | ₪ 0.57 | ₪ 114.00 |
| 4000+ | ₪ 0.48 | ₪ 96.00 |
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details


