Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC MagnaChip MDS5652URH

RS Stock No.: 871-4990Brand: MagnaChipManufacturers Part No.: MDS5652URH
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

11.7 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.75V

Height

1.5mm

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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₪ 2.475

Each (On a Reel of 25) (ex VAT)

₪ 2.896

Each (On a Reel of 25) (inc VAT)

Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC MagnaChip MDS5652URH
Select packaging type

₪ 2.475

Each (On a Reel of 25) (ex VAT)

₪ 2.896

Each (On a Reel of 25) (inc VAT)

Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC MagnaChip MDS5652URH
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
25 - 225₪ 2.475₪ 61.88
250 - 475₪ 2.182₪ 54.54
500+₪ 1.972₪ 49.29

Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

11.7 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.75V

Height

1.5mm

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more