Technical documents
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
236 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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₪ 14.348
Each (In a Tube of 5) (ex VAT)
₪ 16.787
Each (In a Tube of 5) (inc VAT)
5
₪ 14.348
Each (In a Tube of 5) (ex VAT)
₪ 16.787
Each (In a Tube of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
5 - 20 | ₪ 14.348 | ₪ 71.74 |
25 - 45 | ₪ 12.837 | ₪ 64.19 |
50 - 145 | ₪ 11.411 | ₪ 57.05 |
150 - 345 | ₪ 10.81 | ₪ 54.05 |
350+ | ₪ 10.362 | ₪ 51.81 |
Technical documents
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
236 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.