N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2

RS Stock No.: 168-4791Brand: IXYSManufacturers Part No.: MMIX1T600N04T2
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

600 A

Maximum Drain Source Voltage

40 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

23.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

25.25mm

Typical Gate Charge @ Vgs

590 nC @ 10 V

Height

5.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Germany

Product details

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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₪ 4,195.80

₪ 209.79 Each (In a Tube of 20) (ex VAT)

₪ 4,909.09

₪ 245.454 Each (In a Tube of 20) (inc. VAT)

N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2

20

Available in multiples of 20
20₪ 4,195.80
40₪ 8,391.60
60₪ 12,587.40
80₪ 16,783.20
100₪ 20,979.00
120₪ 25,174.80
140₪ 29,370.60
160₪ 33,566.40
180₪ 37,762.20
200₪ 41,958.00
220₪ 46,153.80
240₪ 50,349.60
260₪ 54,545.40
280₪ 58,741.20
300₪ 62,937.00

₪ 4,195.80

₪ 209.79 Each (In a Tube of 20) (ex VAT)

₪ 4,909.09

₪ 245.454 Each (In a Tube of 20) (inc. VAT)

N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2
Stock information temporarily unavailable.

20

Available in multiples of 20
20₪ 4,195.80
40₪ 8,391.60
60₪ 12,587.40
80₪ 16,783.20
100₪ 20,979.00
120₪ 25,174.80
140₪ 29,370.60
160₪ 33,566.40
180₪ 37,762.20
200₪ 41,958.00
220₪ 46,153.80
240₪ 50,349.60
260₪ 54,545.40
280₪ 58,741.20
300₪ 62,937.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

600 A

Maximum Drain Source Voltage

40 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

23.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

25.25mm

Typical Gate Charge @ Vgs

590 nC @ 10 V

Height

5.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Germany

Product details

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more