IXYS HiperFET, Polar N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXFN48N60P

RS Stock No.: 920-0767Brand: IXYSManufacturers Part No.: IXFN48N60P
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

25.42mm

Transistor Material

Si

Length

38.23mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

₪ 1,724.40

₪ 172.44 Each (In a Tube of 10) (ex VAT)

₪ 2,017.55

₪ 201.755 Each (In a Tube of 10) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXFN48N60P

10

Available in multiples of 10
10₪ 1,724.40
20₪ 3,448.80
30₪ 5,173.20
40₪ 6,897.60
50₪ 8,622.00
60₪ 10,346.40
70₪ 12,070.80
80₪ 13,795.20
90₪ 15,519.60
100₪ 17,244.00
110₪ 18,968.40
120₪ 20,692.80
130₪ 22,417.20
140₪ 24,141.60
150₪ 25,866.00

₪ 1,724.40

₪ 172.44 Each (In a Tube of 10) (ex VAT)

₪ 2,017.55

₪ 201.755 Each (In a Tube of 10) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXFN48N60P
Stock information temporarily unavailable.

10

Available in multiples of 10
10₪ 1,724.40
20₪ 3,448.80
30₪ 5,173.20
40₪ 6,897.60
50₪ 8,622.00
60₪ 10,346.40
70₪ 12,070.80
80₪ 13,795.20
90₪ 15,519.60
100₪ 17,244.00
110₪ 18,968.40
120₪ 20,692.80
130₪ 22,417.20
140₪ 24,141.60
150₪ 25,866.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

25.42mm

Transistor Material

Si

Length

38.23mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more