IXYS HiperFET, Polar N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXFN180N15P

RS Stock No.: 194-259Brand: IXYSManufacturers Part No.: IXFN180N15P
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

150 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

680 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

240 nC @ 10 V

Width

25.42mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.23mm

Maximum Operating Temperature

+175 °C

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

₪ 190.54

₪ 190.54 Each (ex VAT)

₪ 222.93

₪ 222.93 Each (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXFN180N15P
Select packaging type

₪ 190.54

₪ 190.54 Each (ex VAT)

₪ 222.93

₪ 222.93 Each (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXFN180N15P
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit price
1 - 4₪ 190.54
5+₪ 183.81

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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

150 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

680 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

240 nC @ 10 V

Width

25.42mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.23mm

Maximum Operating Temperature

+175 °C

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more