IXYS HiperFET, Polar N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXFN102N30P
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
570 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
224 nC @ 10 V
Width
25.42mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.23mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.6mm
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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₪ 213.46
₪ 213.46 Each (ex VAT)
₪ 249.75
₪ 249.75 Each (inc. VAT)
Standard
1
₪ 213.46
₪ 213.46 Each (ex VAT)
₪ 249.75
₪ 249.75 Each (inc. VAT)
Standard
1
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Please check again later.
| quantity | Unit price |
|---|---|
| 1 - 4 | ₪ 213.46 |
| 5 - 19 | ₪ 205.92 |
| 20 - 49 | ₪ 185.25 |
| 50 - 99 | ₪ 173.10 |
| 100+ | ₪ 166.77 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
570 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
224 nC @ 10 V
Width
25.42mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.23mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.6mm
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products