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IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P

RS Stock No.: 168-4470Brand: IXYSManufacturers Part No.: IXFH170N10P
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

100 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

714 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.3mm

Length

16.26mm

Typical Gate Charge @ Vgs

198 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

21.46mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

₪ 2,117.25

₪ 70.575 Each (In a Tube of 30) (ex VAT)

₪ 2,477.18

₪ 82.573 Each (In a Tube of 30) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P

₪ 2,117.25

₪ 70.575 Each (In a Tube of 30) (ex VAT)

₪ 2,477.18

₪ 82.573 Each (In a Tube of 30) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

100 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

714 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.3mm

Length

16.26mm

Typical Gate Charge @ Vgs

198 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

21.46mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more