IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
100 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
198 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+175 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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₪ 459.98
₪ 92.00 Each (Supplied in a Tube) (ex VAT)
₪ 538.18
₪ 107.64 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
5
₪ 459.98
₪ 92.00 Each (Supplied in a Tube) (ex VAT)
₪ 538.18
₪ 107.64 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 5 - 19 | ₪ 92.00 |
| 20 - 49 | ₪ 88.50 |
| 50 - 99 | ₪ 69.45 |
| 100+ | ₪ 66.92 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
100 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
198 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+175 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products