IXYS HiperFET, Polar N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P

RS Stock No.: 168-4483Brand: IXYSManufacturers Part No.: IXFH14N60P
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.3mm

Length

16.26mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

21.46mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

₪ 913.50

₪ 30.45 Each (In a Tube of 30) (ex VAT)

₪ 1,068.80

₪ 35.626 Each (In a Tube of 30) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P

₪ 913.50

₪ 30.45 Each (In a Tube of 30) (ex VAT)

₪ 1,068.80

₪ 35.626 Each (In a Tube of 30) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.3mm

Length

16.26mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

21.46mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more