N-Channel MOSFET Transistor, 17 A, 55 V, 4-Pin IPAK International Rectifier IRLU024N
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
55 V
Package Type
TO-251AA
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
118 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
15 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Width
2.39mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
7.49mm
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P.O.A.
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P.O.A.
1
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Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
55 V
Package Type
TO-251AA
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
118 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
15 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Width
2.39mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
7.49mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products