International Rectifier IRLML2502 N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 IRLML2502TRPBF
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Series
IRLML2502
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Length
3.04mm
Typical Gate Charge @ Vgs
8 nC @ 5 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Thailand
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
₪ 66.00
₪ 3.30 Each (In a Pack of 20) (ex VAT)
₪ 77.22
₪ 3.861 Each (In a Pack of 20) (inc. VAT)
Standard
20
₪ 66.00
₪ 3.30 Each (In a Pack of 20) (ex VAT)
₪ 77.22
₪ 3.861 Each (In a Pack of 20) (inc. VAT)
Stock information temporarily unavailable.
Standard
20
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 80 | ₪ 3.30 | ₪ 66.00 |
| 100 - 980 | ₪ 1.86 | ₪ 37.20 |
| 1000 - 1980 | ₪ 1.41 | ₪ 28.20 |
| 2000 - 3980 | ₪ 1.365 | ₪ 27.30 |
| 4000+ | ₪ 1.215 | ₪ 24.30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Series
IRLML2502
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Length
3.04mm
Typical Gate Charge @ Vgs
8 nC @ 5 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Thailand
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products