International Rectifier N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 IRLML2502TRPBF

RS Stock No.: 162-3274Brand: International RectifierManufacturers Part No.: IRLML2502TRPBF
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Series

IRLML2502

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

8 nC @ 5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

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Stock information temporarily unavailable.

₪ 3,420.00

₪ 1.14 Each (On a Reel of 3000) (ex VAT)

₪ 4,001.40

₪ 1.334 Each (On a Reel of 3000) (inc. VAT)

International Rectifier N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 IRLML2502TRPBF

₪ 3,420.00

₪ 1.14 Each (On a Reel of 3000) (ex VAT)

₪ 4,001.40

₪ 1.334 Each (On a Reel of 3000) (inc. VAT)

International Rectifier N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 IRLML2502TRPBF
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
3000 - 6000₪ 1.14₪ 3,420.00
9000+₪ 1.095₪ 3,285.00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Series

IRLML2502

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

8 nC @ 5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more