Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ C3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
₪ 1,071.00
₪ 10.71 Each (Supplied in a Tube) (ex VAT)
₪ 1,253.07
₪ 12.531 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
100
₪ 1,071.00
₪ 10.71 Each (Supplied in a Tube) (ex VAT)
₪ 1,253.07
₪ 12.531 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
100
Stock information temporarily unavailable.
quantity | Unit price | Per Tube |
---|---|---|
100 - 490 | ₪ 10.71 | ₪ 107.10 |
500 - 990 | ₪ 9.48 | ₪ 94.80 |
1000 - 2490 | ₪ 8.535 | ₪ 85.35 |
2500+ | ₪ 8.43 | ₪ 84.30 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ C3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.