Infineon SIPMOS® P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK SPD08P06PGBTMA1

RS Stock No.: 462-3247PBrand: InfineonManufacturers Part No.: SPD08P06PGBTMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

8.8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

Height

2.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.55V

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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₪ 207.45

₪ 6.915 Each (Supplied on a Reel) (ex VAT)

₪ 242.72

₪ 8.091 Each (Supplied on a Reel) (inc. VAT)

Infineon SIPMOS® P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK SPD08P06PGBTMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

30

Available in multiples of 10
30₪ 207.45
40₪ 276.60
50₪ 345.75
60₪ 414.90
70₪ 484.05
80₪ 553.20
90₪ 622.35
100₪ 691.50
110₪ 760.65
120₪ 829.80
130₪ 592.80
140₪ 638.40
150₪ 684.00
160₪ 729.60
170₪ 775.20

₪ 207.45

₪ 6.915 Each (Supplied on a Reel) (ex VAT)

₪ 242.72

₪ 8.091 Each (Supplied on a Reel) (inc. VAT)

Infineon SIPMOS® P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK SPD08P06PGBTMA1

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

30

Available in multiples of 10
30₪ 207.45
40₪ 276.60
50₪ 345.75
60₪ 414.90
70₪ 484.05
80₪ 553.20
90₪ 622.35
100₪ 691.50
110₪ 760.65
120₪ 829.80
130₪ 592.80
140₪ 638.40
150₪ 684.00
160₪ 729.60
170₪ 775.20

Stock information temporarily unavailable.

quantityUnit pricePer Reel
30 - 120₪ 6.915₪ 69.15
130 - 620₪ 4.56₪ 45.60
630 - 1240₪ 3.57₪ 35.70
1250+₪ 3.135₪ 31.35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

8.8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

Height

2.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.55V

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more