Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK-7
Series
StrongIRFET
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
236 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.67mm
Transistor Material
Si
Width
9.65mm
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
₪ 2,434.50
₪ 24.345 Each (Supplied on a Reel) (ex VAT)
₪ 2,848.36
₪ 28.484 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
₪ 2,434.50
₪ 24.345 Each (Supplied on a Reel) (ex VAT)
₪ 2,848.36
₪ 28.484 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
100 - 248 | ₪ 24.345 | ₪ 48.69 |
250 - 398 | ₪ 23.40 | ₪ 46.80 |
400 - 798 | ₪ 20.985 | ₪ 41.97 |
800+ | ₪ 18.27 | ₪ 36.54 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK-7
Series
StrongIRFET
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
236 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.67mm
Transistor Material
Si
Width
9.65mm
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.