Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Series
StrongIRFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
99 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Country of Origin
China
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 8.055
Each (In a Pack of 10) (ex VAT)
₪ 9.424
Each (In a Pack of 10) (inc. VAT)
10
₪ 8.055
Each (In a Pack of 10) (ex VAT)
₪ 9.424
Each (In a Pack of 10) (inc. VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₪ 8.055 | ₪ 80.55 |
100 - 240 | ₪ 5.705 | ₪ 57.05 |
250 - 490 | ₪ 5.496 | ₪ 54.96 |
500 - 1090 | ₪ 5.23 | ₪ 52.30 |
1100+ | ₪ 4.181 | ₪ 41.81 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Series
StrongIRFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
99 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Country of Origin
China
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.