Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
4.82mm
Transistor Material
Si
Height
9.02mm
Minimum Operating Temperature
-40 °C
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
₪ 236.55
₪ 23.66 Each (Supplied in a Tube) (ex VAT)
₪ 276.76
₪ 27.68 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
₪ 236.55
₪ 23.66 Each (Supplied in a Tube) (ex VAT)
₪ 276.76
₪ 27.68 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
10 - 24 | ₪ 23.66 |
25+ | ₪ 22.08 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
4.82mm
Transistor Material
Si
Height
9.02mm
Minimum Operating Temperature
-40 °C
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.