Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
18.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.55V
Minimum Gate Threshold Voltage
1.65V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
±20 V
Width
4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Height
1.5mm
Series
IRF9910
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
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₪ 7.272
Each (In a Pack of 10) (ex VAT)
₪ 8.508
Each (In a Pack of 10) (inc VAT)
10
₪ 7.272
Each (In a Pack of 10) (ex VAT)
₪ 8.508
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | ₪ 7.272 | ₪ 72.72 |
| 100 - 490 | ₪ 5.761 | ₪ 57.61 |
| 500 - 990 | ₪ 5.202 | ₪ 52.02 |
| 1000 - 1990 | ₪ 4.153 | ₪ 41.53 |
| 2000+ | ₪ 4.013 | ₪ 40.13 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
18.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.55V
Minimum Gate Threshold Voltage
1.65V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
±20 V
Width
4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Height
1.5mm
Series
IRF9910
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products