Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.6 A
Maximum Drain Source Voltage
30 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
4mm
Maximum Operating Temperature
+150 °C
Length
5mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
41 nC @ 5 V
Height
1.5mm
Series
IRF7809AV
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
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₪ 7.37
Each (In a Pack of 10) (ex VAT)
₪ 8.623
Each (In a Pack of 10) (inc VAT)
10
₪ 7.37
Each (In a Pack of 10) (ex VAT)
₪ 8.623
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₪ 7.37 | ₪ 73.70 |
100 - 490 | ₪ 5.454 | ₪ 54.54 |
500 - 990 | ₪ 4.922 | ₪ 49.22 |
1000 - 1990 | ₪ 4.083 | ₪ 40.83 |
2000+ | ₪ 4.055 | ₪ 40.55 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.6 A
Maximum Drain Source Voltage
30 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
4mm
Maximum Operating Temperature
+150 °C
Length
5mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
41 nC @ 5 V
Height
1.5mm
Series
IRF7809AV
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V