Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
1.5mm
Series
IRF7463
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
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₪ 5.412
Each (On a Reel of 4000) (ex VAT)
₪ 6.332
Each (On a Reel of 4000) (inc VAT)
4000
₪ 5.412
Each (On a Reel of 4000) (ex VAT)
₪ 6.332
Each (On a Reel of 4000) (inc VAT)
4000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
4000 - 4000 | ₪ 5.412 | ₪ 21,647.23 |
8000+ | ₪ 5.174 | ₪ 20,696.32 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
1.5mm
Series
IRF7463
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V