Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
363 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
TO-263-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.00095 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Number of Elements per Chip
1
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P.O.A.
N-Channel MOSFET Transistor & Diode, 363 A, 60 V, 7-Pin D2PAK Infineon IRF60SC241ARMA1
800
P.O.A.
N-Channel MOSFET Transistor & Diode, 363 A, 60 V, 7-Pin D2PAK Infineon IRF60SC241ARMA1
Stock information temporarily unavailable.
800
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
363 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
TO-263-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.00095 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Number of Elements per Chip
1