Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
16.51mm
Series
StrongIRFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 13.90
Each (In a Pack of 10) (ex VAT)
₪ 16.263
Each (In a Pack of 10) (inc VAT)
10
₪ 13.90
Each (In a Pack of 10) (ex VAT)
₪ 16.263
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | ₪ 13.90 | ₪ 139.00 |
50 - 190 | ₪ 12.012 | ₪ 120.12 |
200 - 490 | ₪ 10.768 | ₪ 107.68 |
500+ | ₪ 9.467 | ₪ 94.67 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
16.51mm
Series
StrongIRFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.