Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Series
IRF3710ZS
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
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₪ 11.719
Each (In a Pack of 10) (ex VAT)
₪ 13.711
Each (In a Pack of 10) (inc VAT)
10
₪ 11.719
Each (In a Pack of 10) (ex VAT)
₪ 13.711
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₪ 11.719 | ₪ 117.19 |
100 - 190 | ₪ 8.936 | ₪ 89.36 |
200 - 390 | ₪ 8.796 | ₪ 87.96 |
400 - 590 | ₪ 8.712 | ₪ 87.12 |
600+ | ₪ 8.069 | ₪ 80.69 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Series
IRF3710ZS
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V