Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
4.83mm
Series
IRF1010EZS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
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₪ 10.991
Each (In a Pack of 10) (ex VAT)
₪ 12.86
Each (In a Pack of 10) (inc VAT)
10
₪ 10.991
Each (In a Pack of 10) (ex VAT)
₪ 12.86
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₪ 10.991 | ₪ 109.91 |
100 - 490 | ₪ 8.544 | ₪ 85.44 |
500 - 990 | ₪ 7.593 | ₪ 75.93 |
1000 - 1990 | ₪ 6.195 | ₪ 61.95 |
2000+ | ₪ 5.845 | ₪ 58.45 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
4.83mm
Series
IRF1010EZS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V