N-Channel MOSFET, 17.5 A, 650 V, 3-Pin TO-247 Infineon IPW65R190CFDFKSA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ CFD
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
16.13mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Width
5.21mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Product details
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 27.157
Each (In a Pack of 4) (ex VAT)
₪ 31.774
Each (In a Pack of 4) (inc. VAT)
Standard
4
₪ 27.157
Each (In a Pack of 4) (ex VAT)
₪ 31.774
Each (In a Pack of 4) (inc. VAT)
Standard
4
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 4 - 16 | ₪ 27.157 | ₪ 108.63 |
| 20 - 76 | ₪ 23.367 | ₪ 93.47 |
| 80 - 196 | ₪ 22.528 | ₪ 90.11 |
| 200 - 396 | ₪ 20.85 | ₪ 83.40 |
| 400+ | ₪ 20.039 | ₪ 80.16 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ CFD
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
16.13mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Width
5.21mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Product details
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products