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Infineon CoolMOS™ CFD N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1

RS Stock No.: 124-8815Brand: InfineonManufacturers Part No.: IPW65R080CFDAFKSA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS™ CFD

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

391 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

16.13mm

Typical Gate Charge @ Vgs

167 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.21mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

21.1mm

Country of Origin

China

Product details

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

₪ 2,356.20

₪ 78.54 Each (In a Tube of 30) (ex VAT)

₪ 2,756.75

₪ 91.892 Each (In a Tube of 30) (inc. VAT)

Infineon CoolMOS™ CFD N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1

₪ 2,356.20

₪ 78.54 Each (In a Tube of 30) (ex VAT)

₪ 2,756.75

₪ 91.892 Each (In a Tube of 30) (inc. VAT)

Infineon CoolMOS™ CFD N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS™ CFD

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

391 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

16.13mm

Typical Gate Charge @ Vgs

167 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.21mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

21.1mm

Country of Origin

China

Product details

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more