N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 Infineon IPW65R041CFDFKSA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
300 nC @ 10 V
Width
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
21.1mm
Series
CoolMOS CFD
Minimum Operating Temperature
-55 °C
Product details
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 102.42
₪ 102.42 Each (ex VAT)
₪ 119.83
₪ 119.83 Each (inc. VAT)
Standard
1
₪ 102.42
₪ 102.42 Each (ex VAT)
₪ 119.83
₪ 119.83 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 5 | ₪ 102.42 |
| 6 - 14 | ₪ 93.18 |
| 15+ | ₪ 90.52 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
300 nC @ 10 V
Width
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
21.1mm
Series
CoolMOS CFD
Minimum Operating Temperature
-55 °C
Product details
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products