N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 Infineon IPW60R165CPFKSA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS CP
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.13mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Malaysia
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 1,064.25
₪ 35.475 Each (In a Tube of 30) (ex VAT)
₪ 1,245.17
₪ 41.506 Each (In a Tube of 30) (inc. VAT)
30
₪ 1,064.25
₪ 35.475 Each (In a Tube of 30) (ex VAT)
₪ 1,245.17
₪ 41.506 Each (In a Tube of 30) (inc. VAT)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS CP
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.13mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Malaysia
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products